Wafer-Scale Graphene Integrated Circuit
- Yu-Ming Lin*,
- Alberto Valdes-Garcia,
- Shu-Jen Han,
- Damon B. Farmer,
- Inanc Meric†,
- Yanning Sun,
- Yanqing Wu,
- Christos Dimitrakopoulos,
- Alfred Grill,
- Phaedon Avouris*,
- Keith A. Jenkins
- *To whom correspondence should be addressed. E-mail: yming{at}us.ibm.com (Y.-M.L.); avouris{at}us.ibm.com (P.A.)
Abstract
A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.
- Received for publication 16 February 2011.
- Accepted for publication 22 April 2011.